Design of Low power 4 bit ALU using 32 nm FinFET technology

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ABSTRACT:  This paper proposes a 4-Bit Arithmetic logic unit (ALU) using FinFET at 32nm technology. The CMOS has been used widely in current technology. But scaling the CMOS will cause the short channel effects such as DIBL, GIDL, Subthreshold swing, channel length modulation, mobility degradation etc. To change nanoscale CMOS, a multi-gate device called FinFET is suggested. FinFET has its own advantages over the CMOS such as the reduction in leakage power, operating power, leakage current and transistor gate delay, reduced threshold level and steeper subthreshold swing. The target of this paper is to reduce and calculate the leakage power of 4-Bit ALU using FinFET.

 Keywords: FinFET technology; Cmos technology; Arith-metic logic unit (ALU); Leakage power; Low power analysis; Delay analysis.

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